Kinetics of solid-phase interactions in thin-film Cu/Ti system with an excess of Ti

• Published in: Vacuum Vol. 46; no. 11; pp. 1347 - 1350
• Main Authors: Uzunov, TzD, Lambov, SI, Stojanov, StP
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.11.1995; Elsevier
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Metals. Metallurgy; Physics; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Intermetallic compounds; Isothermal annealing; Solid-solid interfaces; Experimental study; Bilayer; Titanium base alloys; Sputtering; Thin films; Binary alloys; Magnetrons; Multilayers; Transition elements; Copper alloys; Titanium; Kinetics; Interface reaction; Copper; Transition element alloys
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/0042-207X(95)00029-1

The kinetics of the formation of the intermetallic CuTi 2 phase during isothermal annealing of thin-film Cu/Ti systems with an excess of Ti has been investigated. The thin-film Cu/Ti systems were deposited by magnetron sputtering of Cu and Ti in Ar at a gas pressure of 5 × 10 −2 Pa on two types of substrate at room temperature. The quantity of the phases formed after each annealing was determined by a quantitative X-ray analysis and an electrochemical anode dissolving method. It is shown that the formation of the intermetallic phase is limited by diffusion processes. On the basis of the Arrhenius' equation the activation energy and preexponential coefficient were determined.