Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of current collapse is seen, however, this also leads...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 64; no. 3; pp. 1197 - 1202
Main Authors Waller, William M., Gajda, Mark, Pandey, Saurabh, Donkers, Johan J. T. M., Calton, David, Croon, Jeroen, Karboyan, Serge, Sonsky, Jan, Uren, Michael J., Kuball, Martin
Format Journal Article
LanguageEnglish
Published New York IEEE 01.03.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
AlGaN/GaN
Aluminum gallium nitride
Aluminum gallium nitrides
Chemical vapor deposition
Current measurement
Effectiveness
Electric contacts
Electric fields
Electric potential
Electron gas
field plate (FP)
Gallium nitrides
HEMTs
High Electron Mobility Transistor (HEMT)
High electron mobility transistors
Leakage
Logic gates
Low pressure
MODFETs
passivation
Position measurement
Semiconductor devices
Silicon nitride
Stoichiometry
Wide band gap semiconductors
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Summary:Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of current collapse is seen, however, this also leads to enhanced FP pinchoff voltages and higher leakage. Electric field concentration at the gate edge is indicated by measuring OFF-state Two dimensional electron gas position with a sense contact technique. A model explaining the FP threshold variation due to barrier leakage is proposed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2654800