Chemically derived seeding layer for {100}-textured PZT thin films

• Published in: Journal of electroceramics Vol. 19; no. 4; pp. 311 - 314
• Main Authors: TYHOLDT, F, CALAME, F, PRUME, K, RAEDER, H, MURALT, P
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Heidelberg Springer 01.12.2007; Springer Nature B.V
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Dielectric properties; Electronics; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Micro- and nanoelectromechanical devices (mems/nems); Microelectronics; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thin films; Interlayers; Inorganic compounds; Lead Titanates; Titanates; PZT; Experimental study; Texture; PZT, Thin film, Seeding; Thin films; Chemical solution deposition; Lead Zirconates; Zirconates; Crystal growth from solutions; Lead Titanates Zirconates; Microelectromechanical device
• ISSN: 1385-3449; 1573-8663
• DOI: 10.1007/s10832-007-9037-2

Issue Title: Special Issue on Piezoelectric for End Users II, Guest Editors: Robert Dorey and Sophie A. Rocks PZT thin films are used extensively in micro electromechanical systems (MEMS) due to its high piezoelectric coefficients. The electromechanical responses can be optimized by using textured films where the transverse coefficient e^sub 31,f^ is of particular importance for MEMS structures such as cantilevers, bridges and membranes. It has been shown that {100}-textured PZT of morphotropic composition fabricated by chemical solution deposition (CSD) provides the highest transverse coefficient [1]. This specific texture can be obtained using a seeding layer of sputter deposited PbTiO^sub 3^ [2]. However, in a CSD process it is advantageous to also be able to produce the seed layer by chemical methods. The piezoelectric and dielectric properties of 2 μm PZT film seeded by CSD PbTiO^sub 3^ measured by a new 4-point bending setup are presented.[PUBLICATION ABSTRACT]