Uniaxial stress studies on the dominant nitrogen defect in silicon and germanium

The microstructure of the dominant nitrogen pair defect in silicon and germanium has been studied by uniaxial stress measurements on local vibrational modes ascribed to the pair. It is shown directly that the pair in germanium has a different structure than that of the well-known nitrogen pair in di...

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Bibliographic Details
Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 36; no. 1-3; pp. 241 - 245
Main Authors Berg Rasmussen, F., Bech Nielsen, B.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.01.1996
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Germanium
Nitrogen
Other topics in equations of state, phase equilibria, and phase transitions
Physics
Silicon
Uniaxial stress
Germanium
Silicon
Nitrogen
Uniaxial stress
Diamonds
Mechanical properties
Nitrogen additions
Microstructure
Defects
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Summary:The microstructure of the dominant nitrogen pair defect in silicon and germanium has been studied by uniaxial stress measurements on local vibrational modes ascribed to the pair. It is shown directly that the pair in germanium has a different structure than that of the well-known nitrogen pair in diamond. All the data are fully consistent with the recently proposed antiparallel model of the pair in both silicon and germanium.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(95)01257-5