ITO film analyses by FTIR

Indium tin oxide thin films have been the subject of extensive research due to their attractive optical and electronic properties. The effects of essential processing steps carried out on these films which are used in layered semiconductor devices have been monitored by FTIR and the different absorp...

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Bibliographic Details
Published inInfrared physics & technology Vol. 36; no. 4; pp. 779 - 784
Main Authors Henry, J., Livingstone, J.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.06.1995
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Infrared and raman spectra and scattering
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Other nonmetallic inorganics
Other semiconductors
Physics
Thin films
Tin oxides
Inorganic compounds
Quantity ratio
Ternary compounds
Indium oxides
Infrared spectra
Absorption spectra
Experimental study
Fabrication property relation
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Summary:Indium tin oxide thin films have been the subject of extensive research due to their attractive optical and electronic properties. The effects of essential processing steps carried out on these films which are used in layered semiconductor devices have been monitored by FTIR and the different absorption spectra obtained indicate that changes are occurring in film composition. In electronics, important compositional changes are normally determined by electrical measurements which often destroy or irreversibly alter the films. Infrared measurements are rapid and non-destructive and so permit analyses through a number of fabrication steps. This technique therefore provides a means for the optimisation of these films.
ISSN:1350-4495
1879-0275
DOI:10.1016/1350-4495(95)91321-I