A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors

A compact wideband amplifier (or gain block) designed around a Darlington pair of GaAs/GaAlAs heterojunction bipolar transistors (HBTs) is discussed. This circuit has been fabricated by an ion-implanted process with a transistor f/sub t/ of 40 GHz. Two variants of the circuit gave either a 8.5-dB ga...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 24; no. 3; pp. 686 - 689
Main Authors Topham, P.J., Long, A.P., Saul, P.H., Parton, J.G., Hollis, B.A., Hiams, N.A., Goodfellow, R.C.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.06.1989
Institute of Electrical and Electronics Engineers
Subjects
Amplifiers
Applied sciences
Bandwidth
Bipolar transistors
Broadband amplifiers
Circuit properties
Circuit testing
Digital integrated circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Fabrication
Gallium arsenide
Heterojunction bipolar transistors
Microwave circuits
Microwave devices
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Summary:A compact wideband amplifier (or gain block) designed around a Darlington pair of GaAs/GaAlAs heterojunction bipolar transistors (HBTs) is discussed. This circuit has been fabricated by an ion-implanted process with a transistor f/sub t/ of 40 GHz. Two variants of the circuit gave either a 8.5-dB gain with a DC-to-5-GHz 3-dB bandwidth or a 13-dB gain with a DC-to-3-GHz bandwidth. These amplifiers gave 11.8- and 18.3-dBm output, respectively, at 1-dB gain compression.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9200
1558-173X
DOI:10.1109/4.32026