AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy

Al 0.33Ga 0.32In 0.35P/Ga 0.65In 0.35P double-heterostructure (DH) light-emitting diodes (LEDs) grown on GaAs 0.7P 0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. We investigate the band gap energy as a function of Al composition in the undoped Al x Ga 0.65− x I...

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Published inJournal of crystal growth Vol. 137; no. 3; pp. 400 - 404
Main Authors Lin, Jyh-Feng, Wu, Meng-Chyi, Jou, Ming-Jiunn, Chang, Chuan-Ming, Lee, Biing-Jye
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.1994
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ternary compound
Aluminium Phosphides
Indium Phosphides
Electrical properties
Composition effect
Experimental study
Light emitting diode
Gallium Phosphides
Double heterojunction
Gallium Arsenides
Quaternary compound
Luminescence spectrum
Production process
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Summary:Al 0.33Ga 0.32In 0.35P/Ga 0.65In 0.35P double-heterostructure (DH) light-emitting diodes (LEDs) grown on GaAs 0.7P 0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. We investigate the band gap energy as a function of Al composition in the undoped Al x Ga 0.65− x In 0.35P alloy with x = 0.0−0.195. Effects of Si and Zn doping on electrical properties have been examined by using disilane and dimethylzinc sources. The DH LED on a bare chip exhibits an emission wavelength around 615 nm and an external quantum efficiency of 0.156% at 20 mA.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)90977-6