A study of annealing effects on deep level profile distributions in GaAs by capacitive methods

Schottky diodes were prepared by the thermal evaporation of aluminium onto n-type GaAs substrates and these were annealed in a quartz tube furnace between 373 and 673 K in a 5% forming gas atmosphere for up to 15 min. By the thermally stimulated capacitance method, two deep levels in the substrate w...

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Bibliographic Details
Published inThin solid films Vol. 162; pp. 13 - 19
Main Authors Bhuiyan, A.S., Martinez, A., Esteve, D.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.08.1988
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Level splitting and interactions
Physics
Gallium Arsenides
Measurement method
Deep level
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Summary:Schottky diodes were prepared by the thermal evaporation of aluminium onto n-type GaAs substrates and these were annealed in a quartz tube furnace between 373 and 673 K in a 5% forming gas atmosphere for up to 15 min. By the thermally stimulated capacitance method, two deep levels in the substrate were detected having critical temperatures of 123 and 271 K. The analysis of C- V data for these diodes at suitable temperatures showed that the first level ( T c=123 K) remained unaffected while the second level ( T c = 271 K) was greatly influenced by heat treatment.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(88)90188-5