An ion-assisted deposition system for use in the fabrication of submicron dimension device ohmic contacts

The design and characterisation of a novel ion-assisted deposition system for use in the fabrication of ohmic contacts to submicron dimension devices is described. The system is based on a conventional electron beam evaporator, which was modified to simultaneously evaporate and partly ionise the con...

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Bibliographic Details
Published inThin solid films Vol. 272; no. 1; pp. 107 - 111
Main Authors Morgan, S.P., Morgan, D.V.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 1996
Elsevier Science
Subjects
Contacts
Cross-disciplinary physics: materials science; rheology
Deposition process
Evaporation
Exact sciences and technology
Materials science
Metallization
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Metallization
Evaporation
Contacts
Deposition process
Characterization
Design
Thin films
Ohmic contacts
Experimental study
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Summary:The design and characterisation of a novel ion-assisted deposition system for use in the fabrication of ohmic contacts to submicron dimension devices is described. The system is based on a conventional electron beam evaporator, which was modified to simultaneously evaporate and partly ionise the contact metallisation. The substrate holder is biased in order that the deposition of the contact metallisation upon the substrate occurs under the influence of low energy ion bombardment. Estimated ionisation efficiencies as high as 7% and ion doses of 5 × 10 15 ions cm −2 have been obtained using Ge as the source material.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(95)06982-8