Step-induced short range order on Si(100) reconstructed surfaces

Two kinds of interaction model are proposed to the asymmetric dimer model of the Si(100) reconstructed surface. One is the short range interaction model, and the other is the one including the longer range electric dipolar interaction. Short range order structures at step edges are examined for the...

Full description

Saved in:
Bibliographic Details
Published inSurface science Vol. 346; no. 1; pp. 55 - 63
Main Authors Kakitani, K, Sakagami, R, Kawamura, T, Yagi, Y, Yoshimori, A
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.02.1996
Amsterdam Elsevier Science
New York, NY
Subjects
Computer simulations
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low index single crystal surfaces
Physics
Scanning tunneling microscopy
Semiconducting surfaces
Silicon
Solid surfaces and solid-solid interfaces
Surface relaxation and reconstruction
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Scanning tunneling microscopy
Semiconducting surfaces
Silicon
Surface relaxation and reconstruction
Computer simulations
Low index single crystal surfaces
Surface reconstruction
Semiconductor materials
Theoretical study
Short-range order
Numerical simulation
Dimers
Step
Correlation functions
Dipole interactions
Online AccessGet full text

Cover

More Information
Summary:Two kinds of interaction model are proposed to the asymmetric dimer model of the Si(100) reconstructed surface. One is the short range interaction model, and the other is the one including the longer range electric dipolar interaction. Short range order structures at step edges are examined for the two kinds of interaction model, and some differences are found. An attempt is made to compare the results with the STM images.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(95)00925-6