Features of the spectral-angular distribution of gamma-quanta emitted by GeV electrons in a thick crystal

With the help of an original experimental technique based on the Compton scattering of gamma-quanta studies of the spectral-angular distributions of radiation generated when 1.2 GeV electrons pass through thick silicon crystals along crystals axes have been made. The features of the spectral-angular...

Full description

Saved in:
Bibliographic Details
Published inPhysics letters. A Vol. 158; no. 3; pp. 176 - 180
Main Authors Antipenko, A.P., Blazhevich, S.V., Bochek, G.L., Fomin, S.P., Kulibaba, V.I., Maslov, N.I., Nasonov, N.N., Ovchinnik, V.D., Shramenko, B.I., Shul'ga, N.F.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 26.08.1991
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids; impact phenomena
Exact sciences and technology
Other topics in emission and impact phenomena in condensed matter
Physics
Angular distribution
Silicon
Gamma radiation
Semiconductor materials
Experimental study
Online AccessGet full text

Cover

More Information
Summary:With the help of an original experimental technique based on the Compton scattering of gamma-quanta studies of the spectral-angular distributions of radiation generated when 1.2 GeV electrons pass through thick silicon crystals along crystals axes have been made. The features of the spectral-angular distributions of radiation of relativistic electrons in thick crystals predicted earlier are shown. Quantitative comparison of theoretical calculations and experimental data is performed. The features of the spectral-angular distributions of gamma-quanta observed in the experiment are shown to be due to the coherent mechanism of radiation in a crystal by above-barrier electrons.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(91)90923-V