Influence of a high vertical magnetic field on Te dopant segregation in InSb grown by the vertical gradient freeze method

• Published in: Journal of crystal growth Vol. 140; no. 3-4; pp. 435 - 438
• Main Authors: Kang, Junyong, Okano, Yasunori, Hoshikawa, Keigo, Fukuda, Tsuguo
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.1994; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Exact sciences and technology; Impurities: concentration, distribution, and gradients; Impurity concentration, distribution, and gradients; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Structure of solids and liquids; crystallography; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Theory and models of film growth; Inorganic compounds; Semiconductor materials; Indium antimonides; Segregation; Thermal gradients; Magnetic field effects; Doped materials; Binary compounds; Experimental study; Tellurium additions; Crystal growth from melts
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)90322-0

A vertical gradient freeze apparatus was set up to investigate the influence of a vertical magnetc field on Te dopant segregation in InSb. Te-doped InSb crystals were grown in the presence and absence of an 80.0 kG magnetic field. The axial profile of the Te concentration in the crystal grown in the magnetic field was observed to be more uniform than that grown without magnetic field, which was attributed to the influence of the high magnetic field on Te dopant segregation by reducing convection in the melt.