Heteroepitaxial growth of gallium antimonide on GaAs by low pressure MOVPE
Undoped GaSb epilayers have been grown on (100) GaAs semi-insulating substrates by low pressure metalorganic vapor phase epitaxy (MOVPE). The effects of growth temperatures and TMSb/TEGa mole fraction ratios on the epitaxial properties of surface morphology, growth rate, carrier concentration and ho...
Saved in:
Published in | Solid-state electronics Vol. 34; no. 8; pp. 815 - 819 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Ltd
01.08.1991
Elsevier Science |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Undoped GaSb epilayers have been grown on (100) GaAs semi-insulating substrates by low pressure metalorganic vapor phase epitaxy (MOVPE). The effects of growth temperatures and TMSb/TEGa mole fraction ratios on the epitaxial properties of surface morphology, growth rate, carrier concentration and hole mobility (measured at 300 and 77 K) have been studied. For TMSb/TEGa mole fraction ratio of 6.84, a smooth surface morphology can be obtained at growth temperature of 550°C. At 550°C, the epitaxial surface grown for
V/
III = 6.64 was more smooth and mirror-like than that grown for
V/
III = 6.84. The growth rate increases with growth temperature. The hole concentration increases and mobility decreases with growth temperature between 520 and 635°C for
V/
III = 6.84. For 550°C grown epilayers: as the V/III ratio increased above 6.64 or decreased below 6.64, the hole concentration increased and the hole mobility decreased. The lowest concentration 1.8 × 10
16
cm
−3 (77
K) and the highest mobility 1447 cm
2/V s (77 K) can be obtained for a V/III ratio of 6.64 at 550°C. |
---|---|
ISSN: | 0038-1101 1879-2405 |
DOI: | 10.1016/0038-1101(91)90226-O |