Preparation of CdTe thin films on Ge substrates by molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 71; no. 2; pp. 361 - 370
• Main Authors: Matsumura, Nobuo, Ohshima, Takefumi, Saraie, Junji, Yodogawa, Yutaka
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.01.1985; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vacuum deposition; Cadmium Tellurides; Crystal growth; Support; Electron diffraction; Epitaxy; Transition metal Compounds; Photoluminescence; Experimental study; X ray diffraction; Inorganic compound; Thin film; Characterization; Molecular beam condensation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(85)90092-2

CdTe films were epitaxially grown on (111) and (100) Ge substrates by MBE at substrate temperatures above 200°C in spite of the large lattice mismatch of 13.5%. From X-ray diffraction and intensity of exciton emissions in photoluminescence the quality of the films was found to be the best at 350°C and the J Cd / J Te ratio of 1/1. But some distortion existed in the epitaxial films. Especially, very large strain remained in the grown films on (100) substrates although the surface morphology was smooth. The (111) films were twinned while the (100) films were not. These results suggest that the twinning in every small area relaxes the lattice strain in (111) films.