Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation

A simple analytical model for the transfer admittance (dynamic transconductance) of MOS transistors is presented. This model establishes, for the first time, a direct correlation between the transfer admittance and the interface state admittance in an explicit analytical form. Experimental measureme...

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Bibliographic Details
Published inSolid-state electronics Vol. 31; no. 6; pp. 1077 - 1082
Main Authors Haddara, Hisham, Ghibaudo, Gérard
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.06.1988
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Field effect transistor
Correlation
Density of states
Interface electron state
MOS transistor
Dynamic model
Modeling
Transconductance
Complex number
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Summary:A simple analytical model for the transfer admittance (dynamic transconductance) of MOS transistors is presented. This model establishes, for the first time, a direct correlation between the transfer admittance and the interface state admittance in an explicit analytical form. Experimental measurements have been performed and the obtained results are in good agreement with our theory. Subsequently, we present a new method for characterising interface states in MOS transistors of channel lengths less than 10 μm from the measurement of the imaginary part of the inverse of the transfer admittance.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90408-X