Stability and Reliability of Lateral GaN Power Field-Effect Transistors

• Published in: IEEE transactions on electron devices Vol. 66; no. 11; pp. 4578 - 4590
• Main Authors: del Alamo, Jesus A., Lee, Ethan S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.11.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: AlGaN; Aluminum gallium nitride; Electronics; Field effect transistors; Gallium nitride; Gallium nitrides; GaN; HEMTs; Integrated circuit reliability; Lateral stability; Logic gates; Millimeter waves; Power amplifiers; Power management; Power semiconductor devices; power transistors; Product development; Reliability; Semiconductor devices; stability; Transistors; Wide band gap semiconductors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2019.2931718

GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems. GaN power transistors for electrical power management are also starting to reach the marketplace. From the dawn of this technology, inadequate transistor stability and reliability have represented stumbling blocks preventing widespread commercial use of GaN electronics. Intense research has been devoted to addressing these issues, and great progress has taken place recently. This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.