Soft X-ray projection imaging with multilayer reflection masks

Patterning methods for an etched multilayer mask and an absorber overlayer mask are investigated for use at a 13-nm wavelength. RIE in SF 6 is used to etch a Mo/Si multilayer and a W absorber overlayer with a SiO 2 etch-stop layer. Fine patterns as small as 0.25 μm are clearly formed. In particular,...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 27; no. 1; pp. 285 - 290
Main Authors Ito, Masaaki, Oizumi, Hiroaki, Soga, Takashi, Yamanashi, Hiromasa, Ogawa, Taro, Katagiri, Soichi, Seya, Eiichi, Takeda, Eiji
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.1995
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Scanning electron microscopy
Patterning
Absorbent material
Cross section
X ray lithography
Mask
Multiple layer
Projection
Reflection
Experimental study
Reflectivity
Microelectronic fabrication
Reactive ion etching
Manufacturing process
Imaging
Silicon Oxides
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Summary:Patterning methods for an etched multilayer mask and an absorber overlayer mask are investigated for use at a 13-nm wavelength. RIE in SF 6 is used to etch a Mo/Si multilayer and a W absorber overlayer with a SiO 2 etch-stop layer. Fine patterns as small as 0.25 μm are clearly formed. In particular, pattern sidewalls of the absorber overlayer mask are extremely steep. The reflectivity measurement using large reflective-area samples indicates that neither method causes significant damage to the multilayer. The mask patterns are imaged onto a resist-coated wafer using a 20:1 Schwarzschild optic, confirming that 0.07-μm line-and-space patterns can be printed using either mask.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(94)00108-7