Response Variability in Commercial MOSFET SEE Qualification

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V DS ) following a test campaign that exposed 50 samples per part type to heavy...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 64; no. 1; pp. 317 - 324
Main Authors George, J. S., Clymer, D. A., Turflinger, T. L., Mason, L. W., Stone, S., Koga, R., Beach, E., Huntington, K., Lauenstein, J-M, Titus, J., Sivertz, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Failure distribution
Field effect transistors
Gaussian distribution
Guidelines
Histograms
Logic gates
MOSFET
Qualifications
Radiation
Semiconductor optical amplifiers
single-event burnout
trench
Variability
Online AccessGet full text

Cover

More Information
Summary:Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V DS ) following a test campaign that exposed 50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2633358