Surface morphology of MBE-grown GaAs(001)−(2 × 4) and GaAs(001)-faceted surfaces investigated by scanning tunneling microscopy
Scanning tunneling microscopy is used to study the morphology of nominally flat p-type (2 × 4)-reconstructed GaAs(001) and faceted n-type GaAs(001) surfaces. On the flat surfaces the effect of the MBE growth rate on the island structures was investigated. A detailed statistical analysis of the STM i...
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Published in | Surface science Vol. 287; pp. 514 - 519 |
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Main Authors | , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Lausanne
Elsevier B.V
10.05.1993
Amsterdam Elsevier Science New York, NY |
Subjects | |
Online Access | Get full text |
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Summary: | Scanning tunneling microscopy is used to study the morphology of nominally flat p-type (2 × 4)-reconstructed GaAs(001) and faceted n-type GaAs(001) surfaces. On the flat surfaces the effect of the MBE growth rate on the island structures was investigated. A detailed statistical analysis of the STM images of individual growths was performed to calculate the step-density and the step-length ratio of the islands. The density of the steps parallel to the dimers, A-type steps, is about twice the density of the steps perpendicular to the dimers, B-type steps. The length ratio of step A to step B was calculated to be 2.4 : 1. The images obtained on the faceted surface reveal predominantly a (2 × 4) local ordering. There is also an increased anisotropy in the local island shape in comparison to the flat surfaces. |
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ISSN: | 0039-6028 1879-2758 |
DOI: | 10.1016/0039-6028(93)90833-6 |