Model for radiation damage buildup in GaN

We propose a model that explains both saturation and a shift of the maximum of bulk disorder profiles in ion-implanted GaN. Our model is based on two main assumptions that (i) the advancing amorphous/crystalline interface acts as a perfect sink for mobile point defects generated in the crystal bulk...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 277; pp. 80 - 83
Main Authors Titov, A.I., Karaseov, P.A., Kataev, A.Yu, Azarov, A.Yu, Kucheyev, S.O.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.04.2012
Subjects
Bulk defect peak
Construction
Crystal defects
Crystal structure
Diffusion length
Disorders
Fluence
Gallium nitrides
GaN
Ion implantation
Radiation damage
Saturation
Bulk defect peak
Ion implantation
GaN
Radiation damage
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Summary:We propose a model that explains both saturation and a shift of the maximum of bulk disorder profiles in ion-implanted GaN. Our model is based on two main assumptions that (i) the advancing amorphous/crystalline interface acts as a perfect sink for mobile point defects generated in the crystal bulk and (ii) the diffusion length of mobile defects increases with increasing ion fluence due to saturation of defect sinks in the bulk.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2011.12.029