Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

• Published in: Superlattices and microstructures Vol. 52; no. 3; pp. 438 - 448
• Main Authors: Sali, S., Boumaour, M., Kermadi, S., Keffous, A., Kechouane, M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.09.2012
• Subjects: Aluminum; Current–voltage characteristics; Doping; Heterojunctions; Optical properties; Silicon; Transmittance; Volt-ampere characteristics; Zinc oxide; ZnO; ZnO/a-Si:H/Si heterojunction; ZnO; ZnO/a-Si:H/Si heterojunction; Current–voltage characteristics; Doping
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2012.05.011

► Al/In-doped ZnO thin films are obtained using an aqueous solution of zinc acetate. ► Average crystallite size are 15nm for ZnO, 10nm for ZnO:Al and 13nm for ZnO:In. ► Optical gaps of the films vary slightly from 3.29 to 3.25eV due to the doping process. ► Low resistivity of 2.8×10−4Ωcm obtained from 0.4M of Zn(C2H3O2)2·2H2O. ► I–V characteristic shows that ZnO/a-Si:H/Si and ZnO:Al/a-Si:H/Si exhibits a rectifying behavior. We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8×10−4Ωcm is obtained for ZnO:Al using 0.4M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442nm (2.80eV) and 490nm (2.53eV). It is noted that after doping the ZnO films a shift of the band by 22nm (0.15eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I–V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.