A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers

We present a metal-insulator-semiconductor nonvolatile memory capacitor based on two gold nanoparticle charge storage layers, two HfO(2) layers, and a multilayer HfNO/HfTiO stack. The device exhibits an equivalent oxide thickness of 7.3 nm, a hysteresis of 15 V at a gate voltage of +11 to -8 V, and...

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Published inJournal of the Electrochemical Society Vol. 157; no. 4; p. H463
Main Authors Mikhelashvili, V., Meyler, B., Yofis, S., Salzman, J., Garbrecht, M., Cohen-Hyams, T., Kaplan, W. D., Eisenstein, G.
Format Journal Article
LanguageEnglish
Published 2010
Subjects
gold
MIS structures
nanoparticles
random-access storage
dielectric hysteresis
high-k dielectric thin films
electric breakdown
semiconductor storage
MIS capacitors
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Summary:We present a metal-insulator-semiconductor nonvolatile memory capacitor based on two gold nanoparticle charge storage layers, two HfO(2) layers, and a multilayer HfNO/HfTiO stack. The device exhibits an equivalent oxide thickness of 7.3 nm, a hysteresis of 15 V at a gate voltage of +11 to -8 V, and a storage charge density of 2.75x10(13) cm(-2). A leakage of 3.6x10(-5) A/cm(2) at -10 V, a breakdown voltage of 13.3 V, and good retention properties with a hysteresis window of 10 V following more than 10 h of consecutive write/erase operations with a +/- 7 V swing were demonstrated. The capacitor characteristics are frequency-independent in the 10 kHz-1 MHz range.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.3302003