Silicon-integrated uncooled infrared detectors: Perspectives on thin films and microstructures

Uncooled infrared (IR) photodetectors for telecommunications, optical processor interconnects, and focal plane arrays are advantageously integrated into systems that are silicon based through advanced thin-film technologies. This paper reviews challenges of materials, microstructures, interfaces, an...

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Bibliographic Details
Published inJournal of electronic materials Vol. 34; no. 5; pp. 484 - 490
Main Authors MEHTA, V. R, SHET, S, RAVINDRA, N. M, FIORY, A. T, LEPSELTER, M. P
Format Conference Proceeding Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.05.2005
Springer Nature B.V
Subjects
Applied sciences
Electronics
Exact sciences and technology
Infrared radiation
Integrated circuits
Micro- and nanoelectromechanical devices (mems/nems)
Microstructure
Optoelectronic devices
Photodetectors (including infrared and CCD detectors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors
Silicon
Thin films
Semiconductor materials
Infrared detector
Experimental study
Photodetector
Inorganic compound
Interconnection
Germanium
Silicon
Schottky barrier diode
Microstructure
Performance
Microelectromechanical device
Interface
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Summary:Uncooled infrared (IR) photodetectors for telecommunications, optical processor interconnects, and focal plane arrays are advantageously integrated into systems that are silicon based through advanced thin-film technologies. This paper reviews challenges of materials, microstructures, interfaces, and reactions of thin-film materials and technologies posed by such applications. [PUBLICATION ABSTRACT]
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-005-0055-z