Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures

(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III–V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the...

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Bibliographic Details
Published inJournal of crystal growth Vol. 166; no. 1-4; pp. 309 - 313
Main Authors Gennari, S., Attolini, G., Pelosi, C., Lottici, P.P., Riccò, F., Labardi, M., Allegrini, M., Frediani, C.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.09.1996
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Vapor phase epitaxy; growth from vapor phase
Atomic force microscopy
Gallium arsenides
Inorganic compounds
Semiconductor materials
Organometallic compounds
Operating mode
Surfaces
Binary compounds
VPE
Crystal growth from vapors
MOVPE
Experimental study
Thin films
Morphology
Growth mechanism
Heterojunctions
Polarity
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Summary:(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III–V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the basis of the images obtained by atomic force microscopy.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(96)00082-6