Polarizabilities of shallow donors in inverse V-shaped quantum wells under laser field

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 41; no. 5; pp. 856 - 860
• Main Authors: Burileanu, L.M., Niculescu, E.C., Eseanu, N., Radu, A.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2009; Elsevier
• Subjects: Binding energy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Donor polarizability; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Laser field; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wells; V-shaped quantum well; 71.55.Eq; 73.21.−b; V-shaped quantum well; Binding energy; Laser field; 71.55.−i; Donor polarizability; Gallium arsenides; 71.55.-i; Polarizability; Quantum wells; 73.21.-b; Aluminium Gallium Arsenides Mixed; Subband; Effective mass model; Shallow level; Laser radiation; Chemical composition; Donor center; High frequency
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2009.01.008

The effect of the high-frequency laser field on the subband structure and on polarizabilities of the shallow donors in a GaAs/GaAlAs inverse V-shaped quantum well for different Al concentrations at the structure center is investigated. Calculations are performed in the effective-mass approximation. It is shown that the polarizability decreases with the increasing of the laser intensity and this effect is stronger for high Al concentration at the well center. Our results are in agreement with previous calculations for square and graded quantum wells.