In-situ measurement of growth rate by laser diffraction during CdTe single crystal growth from the vapour phase

The feasibility of a far-field single-slit laser diffraction technique for in-situ growth rate measurements in physical vapour transport was demonstrated with CdTe single crystals. With a special crystal growth ampoule and a furnace with high optical quality windows, a resolution of better than 1 μm...

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Bibliographic Details
Published inJournal of crystal growth Vol. 147; no. 3; pp. 399 - 402
Main Authors Yang, Bailiang, Isshiki, M., Zhang, Chuanping, Huang, Ximin, Yu, Xiling
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.1995
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Inorganic compounds
Semiconductor materials
Transition element compounds
Measuring methods
Binary compounds
Supersaturation
Crystal growth from vapors
Experimental study
PVT
Monocrystals
Diffraction
Laser radiation
Cadmium tellurides
Kinetics
Physical method
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Summary:The feasibility of a far-field single-slit laser diffraction technique for in-situ growth rate measurements in physical vapour transport was demonstrated with CdTe single crystals. With a special crystal growth ampoule and a furnace with high optical quality windows, a resolution of better than 1 μm was achieved. It was found that the growth rate of CdTe decreases significantly with growth time. In addition, the dependence of the growth rate on supersaturation ( ΔT) was investigated.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)00734-9