Atomic layer doping for Si

• Published in: Thin solid films Vol. 225; no. 1; pp. 163 - 167
• Main Authors: Grützmacher, D.A., Eberl, K., Powell, A.R., Ek, B.A., Sedwick, T.O., Iyer, S.S.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 25.03.1993; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Crystal growth; Growth from vapor; Monolayer; Surface reaction; Molecular beam condensation; Doping; Silicon; Epitaxial film; Coverage rate; Chemical vapor deposition; Surface potential
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(93)90148-I

We report on initial results of the potential of self-limiting surface reactions for the doping of Si layers using molecular beam epitaxy (MBE) and atmospheric pressure chemical vapor deposition (APCVD). In MBE experiments using Sb as an n-type dopant a self-limiting process is obtained at a coverage of half a monolayer. No evidence of a self-limiting process has yet been found for p-type doping using B 2H 6 above 400 °C. In the case of MBE growth at temperatures below 400 °C the B is only partly activated (10%–20%). In APCVD grown samples B surface coverage leads to significant growth inhibition of the subsequent deposition of Si from SiCl 2H 2. Finally, preliminary results of atomic layer doping using AsH 3 in APCVD indicate a self-limitation of chemisorption of AsH 3 at about 0.1 monolayer at a temperature of 600 °C; however, subsequent growth of Si leads to a smearing out of the As due to segregation and to the residence time of As in the system.