Ultraviolet-light-enhanced oxidation of gallium arsenide surfaces studied by X-ray photoelectron and auger electron spectroscopy

Laser-enhanced oxidation of gallium arsenide surfaces has been investigated. The oxidation was performed either in air or in pure water at room temperature. Light at ultraviolet wavelengths was found to enhance the oxidation rate much more strongly than at visible wavelengths. The oxidation in air l...

Full description

Saved in:
Bibliographic Details
Published inChemical physics letters Vol. 130; no. 4; pp. 301 - 306
Main Authors Yu, C.F., Podlesnik, D.V., Schmidt, M.T., Gilgen, H.H., Osgood, R.M.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 1986
Elsevier Science
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid-fluid interfaces
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Crystal growth
X ray
Experimental study
Inorganic compound
Surface
Gallium Arsenides
Ultraviolet radiation
Thick film
Laser beam
Gallium Oxides
Irradiation
Photosensitization
Photoelectron spectrometry
Oxidation
Auger electron spectrometry
Online AccessGet full text

Cover

More Information
Summary:Laser-enhanced oxidation of gallium arsenide surfaces has been investigated. The oxidation was performed either in air or in pure water at room temperature. Light at ultraviolet wavelengths was found to enhance the oxidation rate much more strongly than at visible wavelengths. The oxidation in air leaves the surface almost stoichiometric, whereas the treatment in pure water results in a gallium-rich surface.
ISSN:0009-2614
1873-4448
DOI:10.1016/0009-2614(86)80473-0