Nonlinear diffusion equation for epitaxial growth and recovery on vicinal surfaces
Recently, we derived a theoretical model for molecular-beam epitaxy (MBE) on vicinal surfaces that includes both adatom diffusion and a nonlinear term for diatomic island formation. The model was shown to reproduce and explain both the transient behavior of reflection high-energy electron-diffractio...
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Published in | Journal of crystal growth Vol. 111; no. 1; pp. 162 - 167 |
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Main Authors | , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.05.1991
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Recently, we derived a theoretical model for molecular-beam epitaxy (MBE) on vicinal surfaces that includes both adatom diffusion and a nonlinear term for diatomic island formation. The model was shown to reproduce and explain both the transient behavior of reflection high-energy electron-diffraction measurements of MBE on stepped surfaces and their dependence on the growth conditions. Here, we refine the model to include the formation of higher-atomic islands (with up to ten atoms) as well as their decay, and incorporate a simple model for atom attachment and detachment kinetics at the step edges. We show that incorporation of island break-up is necessary for a realistic model of recovery. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/0022-0248(91)90964-7 |