Nonlinear diffusion equation for epitaxial growth and recovery on vicinal surfaces

Recently, we derived a theoretical model for molecular-beam epitaxy (MBE) on vicinal surfaces that includes both adatom diffusion and a nonlinear term for diatomic island formation. The model was shown to reproduce and explain both the transient behavior of reflection high-energy electron-diffractio...

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Bibliographic Details
Published inJournal of crystal growth Vol. 111; no. 1; pp. 162 - 167
Main Authors Myers-Beaghton, Andrea K., Vvedensky, Dimitri D.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.05.1991
Elsevier
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Summary:Recently, we derived a theoretical model for molecular-beam epitaxy (MBE) on vicinal surfaces that includes both adatom diffusion and a nonlinear term for diatomic island formation. The model was shown to reproduce and explain both the transient behavior of reflection high-energy electron-diffraction measurements of MBE on stepped surfaces and their dependence on the growth conditions. Here, we refine the model to include the formation of higher-atomic islands (with up to ten atoms) as well as their decay, and incorporate a simple model for atom attachment and detachment kinetics at the step edges. We show that incorporation of island break-up is necessary for a realistic model of recovery.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)90964-7