Metalorganic vapor phase epitaxy growth of p-type ZnSSe and its application for blue-green lasers

p-Type doping of ZnSSe layers lattice-matched to GaAs substrates are investigated by metalorganic vapor phase epitaxy (MOVPE) growth, where dimethylzinc, dimethylselenide, and diethylsulfide (DES) or dimethylsulfide (DMS) are used as the host sources and dimethylaminolithium as the acceptor dopant....

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Bibliographic Details
Published inJournal of crystal growth Vol. 138; no. 1; pp. 755 - 758
Main Authors Yanashima, K., Yamasaki, D., Watabe, S., Hara, K., Yoshino, J., Hukimoto, H.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.1994
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers; laser diodes
Crystal growth
Zinc sulfides
Vapor phase epitaxy
Inorganic compounds
Semiconductor lasers
Semiconductor materials
Blue green
Ternary compounds
Organometallic compounds
Visible radiation
Zinc selenides
Experimental study
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Summary:p-Type doping of ZnSSe layers lattice-matched to GaAs substrates are investigated by metalorganic vapor phase epitaxy (MOVPE) growth, where dimethylzinc, dimethylselenide, and diethylsulfide (DES) or dimethylsulfide (DMS) are used as the host sources and dimethylaminolithium as the acceptor dopant. Low-temperature photoluminescence and capacitance measurements show that acceptor impurities, nitrogen and/or lithium, are effectively doped in ZnSSe layers grown by using DMS as the sulfur source, while they are hardly doped in the layers grown by using DES. Stimulated emission in the blue to green spectral region are observed at 77 K from MOVPE-grown structures of separate confinement heterostructure single quantum well (SCH-SQW), ZnSSe/ZnSe/ZnCdSe/ZnSe/ZnSSe/ GaAs, under optical excitation, and evidence of stimulated emission by current injection in a pulsed mode was observed.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)90902-4