Approximation of the carrier generation rate in illuminated silicon

In order to shorten the calculation time for solar cell properties, the light generation rate usually expressed as a sum of individual contributions over the whole solar spectrum is replaced by a curve-fitted approximation. This approximation is represented by a series of three to five exponential t...

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Bibliographic Details
Published inSolid-state electronics Vol. 28; no. 12; pp. 1241 - 1243
Main Authors Furlan, Jože, Amon, Slavko
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.12.1985
Elsevier Science
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
Solar cell
Yugoslavia
Approximation
Equipment
Solar energy
Silicon
Verification
Calculating method
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Summary:In order to shorten the calculation time for solar cell properties, the light generation rate usually expressed as a sum of individual contributions over the whole solar spectrum is replaced by a curve-fitted approximation. This approximation is represented by a series of three to five exponential terms resulting in an analytical solution of the continuity equation which has the same form as for the actual generation rate. Using the proposed approximation the calculated contribution of the base region to the short-circuit current fits closely the result obtained with the actual generation rate.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(85)90048-6