Charge trapping at Pt/high- k dielectric (Ta 2O 5) interface

A detailed analysis of the effects of constant low current injection was done, both in accumulation ( J=0.001–0.2 mA cm −2) and in inversion ( J=0.001–0.04 mA/cm 2). The samples under investigation were metal–insulator–silicon structures containing high- k dielectric Ta 2O 5 radio frequency sputtere...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 406; no. 17; pp. 3348 - 3353
Main Authors Stojanovska-Georgievska, L., Novkovski, N., Atanassova, E.
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier B.V 01.09.2011
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
High- k dielectrics
Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Physics
Pt gate
Silicon
Surface charge trapping effect
Pt gate
Surface charge trapping effect
Silicon
High- k dielectrics
MIS structures
Voltage dependence
Work functions
Tantalum oxide
CV characteristic
Interfaces
Charge carrier trapping
Platinum
Transition elements
High k dielectric
Electron emission
High-k dielectrics
Hysteresis
Radiofrequency sputtering
Charge carrier injection
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Summary:A detailed analysis of the effects of constant low current injection was done, both in accumulation ( J=0.001–0.2 mA cm −2) and in inversion ( J=0.001–0.04 mA/cm 2). The samples under investigation were metal–insulator–silicon structures containing high- k dielectric Ta 2O 5 radio frequency sputtered on p-type Si wafers, with Pt metal gate electrodes. The obtained results were compared with the ones obtained for Al gate samples. This experiment confirms the occurrence of charge trapping in the case of high-work-function Pt as metal. The effect has been attributed to emitting of electrons into the Pt conduction band during which creation of empty traps in the dielectric occurs, which then attract electrons injected in the dielectric. In order to examine the reversibility of the process, successive short runs as well as long runs (up to 10000 s) were performed.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2011.05.058