Detection of compound formation at the ZnSe/GaAs interface using high resolution transmission electron microscopy (HRTEM)

• Published in: Journal of crystal growth Vol. 114; no. 1; pp. 99 - 106
• Main Authors: Wright, A.C., Williams, J.O.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.1991; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; High resolution; Semiconductor materials; Epitaxy; Solid solid interface; Transition metal Compounds; Organometallic compound; Inorganic compound; Thin film; Growth from vapor; Transmission electron microscopy; Chemical reaction; Image theory; Zinc Selenides; Heterojunction; Lattice image
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(91)90684-W

Experimental high resolution transmission electron microscopy (HRTEM) and theoretical image simulations have been used to confirm the presence of compound formation at interfaces between ZnSe epitaxial layers prepared by metalorganic vapour phase epitaxy (MOVPE) and single crystal GaAs substrates. Visibility of the compound in HRTEM is enhanced using the [100] projection instead of the more usual [110] direction for cross-sectional studies. Electron image simulations indicate that HRTEM has the capability to detect the occurrence of compound formation down to thicknesses of one unit cell. Our experimental results show compound layer thicknesses of 2 nm.