Analysis of generation and movement of dislocations in InP by a study of the deformation behaviour

• Published in: Journal of crystal growth Vol. 83; no. 3; pp. 383 - 390
• Main Authors: Völkl, J., Müller, G., Blum, W.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.1987; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Exact sciences and technology; Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, epr, nmr, etc.); Physics; Structure of solids and liquids; crystallography; Temperature; Deformation; Impurity; Indium Phosphides; Constraint; Experimental study; Zinc; Inorganic compound; Dislocation; Characterization; Shear stress; Sulfur; Strain rate
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(87)90301-0

This paper gives a quantitative description of the deformation behaviour of undoped, zinc and sulphur doped InP in the temperature range of 600 to 800°C, which could be deduced from tests with constant strain rate as well as constant load. A point of minimum deformation resistance has been observed in undoped as well as doped InP obeying a mechanical equation of state, which relates stress τ and strain rate ϵ at a given temperature. In the range of low strain rates the lower yield stress of Zn doped material has been found to increase with the cube root of the concentration. The effectiveness of Zn and S doping on the reduction of the dislocation density is discussed. Finally an estimate is given of the critical resolved shear stresses and their impact on crystal growth.