Extrinsic photoluminescence from InGaAs/GaAs pseudomorphic single quantum wells

Extrinsic luminescence due to carbon and beryllium acceptors in InGaAs pseudomorphic single quantum wells has been studied. The relative intensity is found to be very weak, even for acceptor concentrations ∼ 10 17 cm −3 . Acceptor binding energies are obtained and compared with those for GaAs/AlGaAs...

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Bibliographic Details
Published inSolid state communications Vol. 65; no. 1; pp. 19 - 21
Main Authors Devine, R.L.S., Moore, W.T.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1988
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Quantum well
Exciton
Gallium Indium Arsenides Mixed
Semiconductor materials
Impurity
Photoluminescence
Experimental study
Carbon
Inorganic compound
Thickness
Gallium Arsenides
Acceptor center
Internal stress
Binding energy
Beryllium
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Summary:Extrinsic luminescence due to carbon and beryllium acceptors in InGaAs pseudomorphic single quantum wells has been studied. The relative intensity is found to be very weak, even for acceptor concentrations ∼ 10 17 cm −3 . Acceptor binding energies are obtained and compared with those for GaAs/AlGaAs quantum wells and InGaAs/GaAs multilayer structures. Despite the relatively large strains in the InGaAs/GaAs single quantum wells, we do not observe any significant effect on the binding energies.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(88)90578-9