Optical properties of III–V semiconductor quantum wires and dots

I review here the brief history and present status of research on the optical properties of III–V semiconductor quantum wires and dots. These efforts are driven in part by predictions of interesting linear and nonlinear optical properties for these structures. Experimental work has focused on variou...

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Bibliographic Details
Published inJournal of luminescence Vol. 46; no. 2; pp. 69 - 82
Main Author Kash, K.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.1990
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Quantum well
Confinement
Exciton
Quantum dot
Semiconductor materials
Solid solid interface
Charge carrier
Photoluminescence
Optical transition
Review
III-V compound
Inorganic compound
Energy gap
Spontaneous emission
Binding energy
Quantum wire
Excitation spectrum
Non linear effect
Optical absorption
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Summary:I review here the brief history and present status of research on the optical properties of III–V semiconductor quantum wires and dots. These efforts are driven in part by predictions of interesting linear and nonlinear optical properties for these structures. Experimental work has focused on various schemes to make uniform arrays of structures. New techniques developed for making these arrays have been followed by the observation of large zero-point energies and subband splittings for electrons, and modified exciton binding energies and selection rules for optical transitions in quantum wires.
ISSN:0022-2313
1872-7883
DOI:10.1016/0022-2313(90)90009-Z