Electroluminescence from porous silicon using a conducting polyaniline contact

• Published in: Thin solid films Vol. 276; no. 1-2; pp. 299 - 302
• Main Authors: Halliday, D.P, Holland, E.R, Eggleston, J.M, Adams, P.N, Cox, S.E, Monkman, A.P
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15.04.1996; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity; Exact sciences and technology; Luminescence; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Polymers; Porous materials; Silicon; Conductivity; Silicon; Polymers; Luminescence; Porous materials; Photoluminescence; Electroluminescence; Microelectronics; Experimental study; Coatings; Electrical measurement; Microelectronic fabrication; p n junctions; Optical properties; Barrier height; IV characteristic; Polyanilines
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(95)08102-X

We have fabricated a p-n junction using a p-type conducting polyaniline layer deposited on an n-type porous silicon layer. This junction shows rectifying behaviour. The I–V curves can be fitted to a Schottky barrier model with a barrier height of 0.8 eV. the porous silicon shows an orange photoluminescence band due to recombination in the silicon quantum structures both before and after coating with polyaniline. The junction emits visible electroluminescence when a forward bias is applied. The emission band is very broad extending from 500 to 1 000 nm with a peak at 790 nm. Mechanisms for charge transfer between the porous silicon and polyaniline are discussed.