X-ray transmission topography of GaAs/InGaAs strained layer superlattices

X-ray transmission topographs of GaAs/In 0.15Ga 0.85As strained layer superlattices are presented. Superlattices composed of 4-period are shown to be free of misfit dislocations and if composed of 10 periods they exhibit some misfit dislocations. The topographs of specimens prepared to have a very l...

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Bibliographic Details
Published inJournal of crystal growth Vol. 75; no. 2; pp. 295 - 300
Main Authors Joncour, M.C., Mellet, R., Charasse, M.N., Burgeat, J.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.05.1986
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Gallium Arsenides
Gallium Indium Arsenides Mixed
Misfit dislocation
Multiple layer
X ray topography
Crystal defect
Experimental study
Superlattice
Inorganic compound
Thin film
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Summary:X-ray transmission topographs of GaAs/In 0.15Ga 0.85As strained layer superlattices are presented. Superlattices composed of 4-period are shown to be free of misfit dislocations and if composed of 10 periods they exhibit some misfit dislocations. The topographs of specimens prepared to have a very low angle chemically realized bevel show that the misfit dislocations are located at the first interface between the substrate and the superlattice, and that the amount of relaxation is about 4% in the case of a 10-period superlattice.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(86)90042-4