Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 193; pp. 41 - 48
• Main Authors: Smith, Nathan A., Evans, Jon E., Jones, Daniel R., Lord, Alex M., Wilks, S.P.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2015
• Subjects: Array; Arrays; Catalyst free; Chemical vapor deposition; Device; Drying; Etching; Nanowire; Nanowires; Seeds; Silicon substrates; Topography; Vertical; Zinc oxide; Vertical; Array; Nanowire; Zinc oxide; Catalyst free; Device

•Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si.•Si surface topography was altered by substrate etching, resulting in NW growth.•XPS analysis shows growth is related to topography and not surface contamination.•Using e-beam lithography with etching, selective nanowi...