Lateral space-charge effects on ballistic electron transport across graded heterojunctions

• Published in: Solid-state electronics Vol. 32; no. 12; pp. 1557 - 1561
• Main Authors: Weinzierl, S., Krusius, J.P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01.12.1989; Elsevier Science
• Subjects: Ballistic transport; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; heterojunction; Monte Carlo simulation; Physics; space charges; space charges; Ballistic transport; heterojunction; Monte Carlo simulation
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(89)90273-6

Hot electron transport across graded compound semiconductor heterojunctions has been explored using a two-dimensional formulation of the self-consistent ensemble Monte Carlo method. The Al xGa 1-xAs/GaAs heterojunction imbedded into a vertical field effect transistor with two ohmic contacts (source, drain) and two lateral Schottky gates has been used as an example. Lateral space charges modulated by the gates are shown to control ballistic injection of electrons over the heterojunction under steady state conditions. The transient response to a gate pulse is found to be determined by carrier transit from the heavily doped source contact region into the channel. A conceptual one-dimensional section model is used to explain the Monte Carlo results.