Nanostructured thermoelectric materials

• Published in: Journal of electronic materials Vol. 34; no. 5; pp. L19 - L22
• Main Authors: HARMAN, T. C, WALSH, M. P, LAFORGE, B. E, TURNER, G. W
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.05.2005; Springer Nature B.V
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Materials science; Mechanical properties; Nanoscale materials and structures: fabrication and characterization; Nanostructured materials; Physics; Quantum dots; Conduction bands; Valence bands; Inorganic compounds; Electrical conductivity; Lead selenides; Quantum dots; Doping; Seebeck effect; Crystal growth from vapors; Nanostructures; Experimental study; Sodium additions; Lead tellurides; Bismuth additions; Thermoelectric power; Superlattices; Molecular beam epitaxy; Thermal conductivity; Figure of merit
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-005-0083-8

High values of thermoelectric figures of merit ZT, ranging from ZT = 1.6 at 300 K to ZT = 3 at 550 K, are reported for Bi-doped n-type PbSeTe/PbTe quantum-dot superlattice (QDSL) samples grown by molecular beam epitaxy (MBE). These ZT values were determined by directly measuring Seebeck coefficients and electrical conductivities and using the low lattice thermal conductivity value (~3.3 mW/cm-K) determined experimentally from measurements of a one-legged thermoelectric cooler. Initial experiments have also shown that high values of ZT (~1.1 at 300 K) are achievable for complementary Na-doped p-type PbSeTe/PbTe QDSL samples, in which the conduction and valence bands mirror those in the Bi-doped Pb chalcogenides. [PUBLICATION ABSTRACT]