Unipolar nonvolatile memory devices with composites of poly(9-vinylcarbazole) and titanium dioxide nanoparticles

• Published in: Organic electronics Vol. 10; no. 3; pp. 473 - 477
• Main Authors: Cho, Byungjin, Kim, Tae-Wook, Choe, Minhyeok, Wang, Gunuk, Song, Sunghoon, Lee, Takhee
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2009; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Filamentary conduction; Integrated circuits; Integrated circuits by function (including memories and processors); Magnetic and optical mass memories; Materials science; Nanoscale materials and structures: fabrication and characterization; Nonvolatile unipolar memory; Other topics in nanoscale materials and structures; Physics; Poly(9-vinylcarbazole); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Storage and reproduction of information; Titanium dioxide nanoparticles; Filamentary conduction; Poly(9-vinylcarbazole); 84.37.+q; 73.61.Ph; Nonvolatile unipolar memory; Titanium dioxide nanoparticles; 85.35.−p; Electrical switching; Memory devices; Nanoparticle; Tunnel effect; Retention factor; 85.35.-p; Carbazole(vinyl) polymer; Composite material; Electrical measurement; Non volatile memory; Thermal activation; Integrated circuit; Circuit bistability; Titanium oxide; Memory effect
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2009.02.001

Organic-based devices with an 8 × 8 array structure using titanium dioxide nanoparticles (TiO 2 NPs) embedded in poly(9-vinylcarbazole) (PVK) film exhibited bistable resistance states and a unipolar nonvolatile memory effect. TiO 2 NPs were a key factor for realizing the bistability and the concentration of TiO 2 NPs influenced ON/OFF ratio. From electrical measurements, switching mechanism of PVK:TiO 2 NPs devices was closely associated with filamentary conduction model and it was found that the OFF state was dominated by thermally activated transport while the ON state followed tunneling transport. PVK:TiO 2 NPs memory devices in 8 × 8 array structure showed a uniform cell-to-cell switching, stable switching endurance, and a high retention time longer than 10 4 s.