Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 114; no. 3; pp. 337 - 345
• Main Authors: Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Droopad, R., Maracas, G.N.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.1991; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Crystal growth; Gallium Arsenides; Quantum well; Exciton; Semiconductor materials; Support; Photoluminescence; Optical transition; Aluminium Gallium Arsenides Mixed; Experimental study; Low temperature; Inorganic compound
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(91)90050-F

GaAs/AlGaAs single quantum wells have been grown by gas source molecular beam epitaxy (GSMBE). Photoluminescence (PL) linewidth of the electron to heavy hole excitonic transition is optimized as a function of substrate growth temperature. Transitions corresponding to monolayer changes in well width and impurity bound excitons are examined by deliberately growing quantum wells with additional monolayer-off wells, and by modulation doping the barriers. Growth interruption at the inverted interface was found to enhance impurity bound transitions. The narrowest 2 K photoluminescence linewidths are reported for wells in the range of 50–100 Å grown by GSMBE. The differences in the growth kinetics due to the presence of As 2 and H 2 leading to improved PL linewidth are reported.