OMVPE growth of GaP and AlGaP using tertiarybutylphosphine as the phosphorus source

GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700°C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2×10 3...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 110; no. 3; pp. 571 - 575
Main Authors Takeda, Yoshikazu, Araki, Soichiro, Noda, Susumu, Sasaki, Akio
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.1991
Elsevier
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Crystal growth
Growth from vapor
Aluminium Gallium Phosphides Mixed
Experimental study
Inorganic compound
Thin film
Gallium Phosphides
Online AccessGet full text

Cover

More Information
Summary:GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700°C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2×10 3 μm/mol and that for AlGaP was 2.1×10 3 μm/mol. 4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)90294-F