Low-temperature printing of crystalline:crystalline polymer blend transistors

• Published in: Organic electronics Vol. 11; no. 7; pp. 1296 - 1300
• Main Authors: Sparrowe, David, Baklar, Mohammed, Stingelin, Natalie
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2010; Elsevier
• Subjects: Applied sciences; Crystalline:crystalline blends; Electronics; Exact sciences and technology; FETs; Flexography; Microelectronic fabrication (materials and surfaces technology); Poly(3-hexylthiophene); Printing; PVDF; Semiconducting blends; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Semiconducting blends; Printing; Poly(3-hexylthiophene); Crystalline:crystalline blends; PVDF; Flexography; FETs; Polyethylene; Polymer blends; Roll-to-roll process; Crystalline material; Field effect transistor; Microelectronic fabrication; Thiophene derivative polymer; Field effect devices; Manufacturing process; Flexible structure; Vinylidene fluoride polymer; Percolation; Manufacturing; Organic insulators; Cost lowering; Growth from solution; Low temperature
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2010.04.022

By blending poly(3-hexylthiophene) with poly(vinylidene fluoride) and with careful solvent selection, field-effect transistors are fabricated from solution with deposition temperatures suitable for use in low-cost roll-to-roll manufacturing techniques. A percolation threshold of only ∼3 wt.% P3HT is demonstrated, with field-effect mobilities of 0.04 cm 2/Vs obtained in such PVDF-rich blend devices being equal to neat P3HT field-effect transistors. We illustrate the potential of this material system by the fabrication of working field-effect transistor devices, wherein the semiconductor blend is deposited via flexo-printing. Flexible polyethylene naphthalate substrates and an organic gate dielectric were utilized for this purpose.