High-frequency capacitance-voltage characteristics of amorphous (undoped)/crystalline silicon heterostructures

A numerical procedure is presented for calculating high-frequency capacitance variation with bias in amorphous (undoped)/crystalline silicon heterojunction. The results of the model calculations using this procedure have been reported, for different p silicon substrates. These have been compared wit...

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Bibliographic Details
Published inSolid-state electronics Vol. 34; no. 6; pp. 535 - 543
Main Authors Iyer, Suman B., Kumar, Vikram, Harshavardhan, K.S.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.06.1991
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Interface electron state
Theoretical study
MIS structure
Amorphous state
Multijunction structure
Calculating method
Capacitance
Silicon
P type conductivity
High frequency
Comparative study
Voltage capacity curve
Heterojunction
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Summary:A numerical procedure is presented for calculating high-frequency capacitance variation with bias in amorphous (undoped)/crystalline silicon heterojunction. The results of the model calculations using this procedure have been reported, for different p silicon substrates. These have been compared with the corresponding capacitance variations in the other limiting case, in which the heterostructure acts like an MIS structure. The effect of interface states on the capacitance characteristics has also been studied. In the second part, we report the results of 1 MHz capacitance measurements on various amorphous (undoped)/crystalline silicon heterostructures.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(91)90122-F