Low temperature silicon thermal CVD epitaxy using dichlorosilane and difluorosilane as reactant gas

• Published in: Journal of crystal growth Vol. 106; no. 4; pp. 719 - 723
• Main Authors: Nagira, Susumu, Hatano, Atsumi, Takeuchi, Masayoshi, Kuroda, Ekyo, Migitaka, Masatoshi
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.1990; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Silicon; Chemical vapor deposition; Epitaxy; Silane; Low temperature
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(90)90049-Q

The effect of adding difluorosilane (SiH 2F 2) to dichlorosilane (SiH 2Cl 2) on low temperature silicon epitaxy was investigated using the conventional barrel type epitaxial reactor. It was shown that the crystalline quality was improved by the addition of difluorosilane at low temperature epitaxy. With about 7% difluorosilane in silicon source gas (dichlorosilane), and under reduced pressure, the epitaxial growth temperature for excellent crystal can be lowered to 800°C. It is thought that the added difluorosilane acts to remove the native oxide on the surface of silicon substrates.