Direct current diode sputtering: a study of the thermal power dissipated in the substrate
Changes in the thermal power transferred to the substrate from a dc diode sputtering discharge have been investigated. The measurements were made by monitoring the temperature rise during the first seconds of a sputtering run. The results show the contribution of electrons and ions accelerated by th...
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Published in | Vacuum Vol. 44; no. 2; pp. 117 - 121 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Ltd
01.02.1993
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Changes in the thermal power transferred to the substrate from a dc diode sputtering discharge have been investigated. The measurements were made by monitoring the temperature rise during the first seconds of a sputtering run. The results show the contribution of electrons and ions accelerated by the negative bias voltage. We have also measured the temperature of the substrate, without cooling it may be as high as 600°C. |
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ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/0042-207X(93)90359-I |