Effect of growth rate on the surface morphology of MBE-grown GaAs(001)-(2 × 4)
Scanning tunneling microscopy (STM) has been used to investigate the effect of the deposition rate on the resulting morphology of GaAs(001)-(2 × 4) surfaces grown by molecular beam epitaxy. Low deposition rates (0.2 microm/h) are found to create smooth surfaces and lead to anisotropic islanding with...
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Published in | Surface science Vol. 302; no. 1; pp. L269 - L274 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
20.01.1994
Amsterdam Elsevier Science New York, NY |
Subjects | |
Online Access | Get full text |
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Summary: | Scanning tunneling microscopy (STM) has been used to investigate the effect of the deposition rate on the resulting morphology of GaAs(001)-(2 × 4) surfaces grown by molecular beam epitaxy. Low deposition rates (0.2 microm/h) are found to create smooth surfaces and lead to anisotropic islanding with average length ratios of A steps to B steps which are measurably larger than those produced by standard deposition rates (0.7 microm/h). For each growth rate, the mean-square-height fluctuation function has been calculated in order to characterize the surface roughness observed with STM and the anisotropy associated with the roughness. |
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ISSN: | 0039-6028 1879-2758 |
DOI: | 10.1016/0039-6028(94)91087-1 |