Systematic variation of the Szigeti charge in compound semiconductors

It is shown that linear relationships exist between the Szigeti charge and the ratio of the anion radius to the nearest-neighbour distance in compound semiconductors. The relationships provided can be used to determine the Szigeti charge under conditions for which it cannot usually be found directly...

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Bibliographic Details
Published inPhysics letters. A Vol. 118; no. 2; pp. 82 - 84
Main Authors Koh, A.K., Miller, D.J.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 29.09.1986
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Level splitting and interactions
Physics
Hyperfine interaction
Semiconductor materials
II-VI compound
Lattice distortion
Impurity
Chemical bond
Transition metal Compounds
Theoretical study
Ionic radius
Solid solution
III-V compound
Inorganic compound
Ionicity
Manganese
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Summary:It is shown that linear relationships exist between the Szigeti charge and the ratio of the anion radius to the nearest-neighbour distance in compound semiconductors. The relationships provided can be used to determine the Szigeti charge under conditions for which it cannot usually be found directly.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(86)90652-3